NE Labs

Laboratory

Molecular Beam Epitaxy Laboratory

Leader Lin, Hao-Hsiung

Introduction

MBE lab is located in EE building I. Major facilities are two VG-V80 MBE systems for growing III-V compound semiconductor materials and devices. Other equipments include parameter analyzer, PL system, Hall effect system and etc., which are for device and material characterization. The current research topics are on (1) GaAsSb/GaAs type-II quantum well structure and devices, (2) InAsN and Sb-based MIR optoelectronic materials and devices, and (3) InAs/GaAs quantum dot and its applications on optoelectronic devices.

Laboratory

Semiconductor laser and Ultrafast Optoelectronics Lab

Leader Lin, Ching-Fuh

Introduction

Our laboratory has been established since August 1993 and located in Room 405 of EE bldg 2. We are led by Prof. Ching-Fuh Lin and concentrate in semiconductor lasers and related research. Since 1997, we have published 58 international journal papers, 130 conference proceeding papers, and obtained 24 patens with many others pending. Our research topics include experiments and theory, and cover electroluminescence and laser of silicon, optical and spectral characteristics measurement, electrical characteristics measurement, fabrication and quantum-dot lasers, mode-locked semiconductor lasers, etc.

Laboratory

Advanced Silicon Deviceand Process Laboratory

Leader Liu, Chee-Wee

Introduction

His research includes SiGe/GeSn epi/photonics, stacked 3D transistors, RF device and circuit/thermal simulation (physics-based and machine learning-based), IGZO TFT, SRAM/MIM/FTJ, FRAM, FeFET/MTJ/SOT/DRAM, and CMOS image sensors. He demonstrates the tallest transistor (8/16/24 stacked channels), the record high 2,400,000 cm2/Vs electron mobility in strained Si, the first Si-capped SiGe/Ge channels with 3x mobility enhancement (in 5nm node production now), the first CVD GeSn outperforming MBE in terms of hole mobility, the first stacked GeSn/GeSi channel GAA(nanosheet/nanowire) transistors, and the first Si/SiGe/SiC MIS LED/photodetectors. He also invented the tree/E transistors, beyond Stacked GAA. He has 683+ papers (263+ journal papers, 31 IEDM, 18VLSI), 75 US patents, 2 China patents, 50 Taiwan ROC patents, more than 8195+ citations with h-index=40, 44 Ph.D. graduates, and 143 master graduates. He has 6 graduate students as professors (2NTU, 1 NTNU, 1 NCHU, 1 NDHU, 1 NJUST), and 3 postdocs as professors (1 NTU, 1 NCU, 1 CGU). Currently, he is advising 22 PhD students and 26 masters.

Laboratory

Organic Optoelectronics andDisplay Technology Lab

Leader Wu, Chung-Chih

Introduction

The Organic Optoelectronics Lab is directed by Dr. Chung-Chih Wu. Current research efforts are in two major areas: (1) display technologies: such as high-efficiency, high image-quality full-color OLED device and display technologies; display optics etc.; (2) organic optoelectronics and semiconductors: such as physics/technologies of organic semiconductors and devices; light-emitting and electronic devices; photoresponsive devices; carrier transport and photophysics in organic semiconductors and devices. Major facilities include deposition systems for organic materials and devices, and various electrical and optical characterization instruments.

Laboratory

The Bio-Electrical System Technology Lab

Leader Lin, Chih-Ting

Introduction

The Bio-Electrical System Technology Lab is focus on the research of integration technologies. Utilizing the nano/micro-fabricaiton techniques, interface circuit design, and various sensing material evelopment, the integrated health-care system with low-cost and highperformance can be implemented. In detail, this lab is devoted to develop the following research fields: (1) Wireless Sensor Network; (2) Bio-Molecular Sensor Array; (3) Micro Gas Sensor Array, and (3) Micro Total-Analysis-System. Currently, this lab is located at Room 206 of Electrical Engineering Building I.

Laboratory

Integrated Optoelectronic Device Lab

Leader Wu, Chao-Hsin (Wayne)

Introduction

My researches focus on compound semiconductor microelectronic and optoelectronic devices, light-emitting transistors, transistor lasers, sub-10nm transistor development, photonic integrated circuits, microwave device design and characterization, power electronics, microcavity lasers, and VCSELs.

Laboratory

E-Beam Lab

Leader Wu, Chao-Hsin (Wayne)

Introduction

EB-lab is located in Rooms 128 and 129 of the Electrical Engineering Building II. The lab is dedicated to the study of electron beam lithography systems to accelerate device fabrication in fields such as semiconductor nanofabrication. Through rapid exposure and development techniques, it is possible to control the minimum linewidth down to 50 nanometers. The research areas include: 1. Study and application of photonic crystals related to metasurfaces. 2. Fabrication processes and applications of III-V semiconductor optoelectronic and electronic devices. 3. Research on patterned substrates (PS) aimed at reducing lattice mismatch in heterostructures to enhance the overall efficiency of devices such as LEDs and HEMTs. In addition, the lab utilizes a dual-beam system composed of electron and ion beams for in-depth and comprehensive device inspection. The ion beam enables surface sample cutting to verify the structural integrity of the device, while the electron beam can simultaneously observe the sample, achieving highly efficient process inspection.

Laboratory

Quantum Electronics Laboratory (QEL)

Leader Li, Jiun-Yun

Introduction

Quantum Electronics Laboratory (QEL) was established in 2013 summer by Prof. Jiun-Yun Li. The main focus is to explore the logic devices for future computing. By semiconductor epitaxy technology such as chemical vapor deposition (CVD), combined with atomic layer deposition (ALD), we grow high-quality heterostructures for advanced logic and memory devices, quantum computing, spin transistors, and Si photonics applications.

Laboratory

Nanoelectronics and Memory Research Lab

Leader Hu, Vita Pi-Ho

Introduction

(1) Ferroelectric FET and memory circuits for energy-efficient edge computing applications - FeFET nonvolatile memory for in-memory computing and neuromorphic applications (2) Analysis of Silicon, Ge, III-V, and 2D materials based nano-electronics, including the variability and reliability analysis of UTB FET, FinFET, nanowire/nanosheet FETs, TFET, and NCFET etc. (3) Low power and high performance SRAM design - Variability-tolerant and reliability-tolerant design - Read-/write-assist circuits and sense amplifiers (4) Monolithic 3D IC and system-technology co-optimization