Prof. An-Yu (Andy) Wu receive 2019 ECE Distinguished Alumni Award from Department of Electrical & Computer Engineering, University of Maryland.
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2019-03-04 | |
Prof. Yao-Wen Chang and his team won the 3rd Place at the 2018 ACM ISPD Initial Detailed Routing Contest.
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2018-05-09 | |
Prof. Tei-Wei Kuo received 2017 Outstanding Technical Achievement and Leadership Award from IEEE Technical Committee on Real-Time Systems (TCRTS).
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2018-01-04 | |
Prof. Cheewee Liu and Prof. Yi-Jan Chen were elevated to IEEE Fellow, effective 1 January 2018.
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2017-11-21 | |
Prof. Yao-Wen Chang is elected as President-Elect of CEDA for 2018-2019, and President of CEDA for 2020-2021.
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2017-11-16 | |
Prof. Yao-Wen Chang received Best Paper Award at the 54th ACM/IEEE Design Automation Conference (DAC 2017).
Paper title: Toward Optimal Legalization for Mixed-Cell-Height Circuit Designs.
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2017-06-26 | |
Chai-Heng Wu, Ting-Sheng Chen, Ding-Yuan Lee, Prof. Tsung-Te Liu, and Prof. An-Yeu Wu receive Best Paper Award from 2017 International Symposium on VLSI Design, Automation and Test (2017 VLSI-DAT).
Chai-Heng Wu, Ting-Sheng Chen, Ding-Yuan Lee, Prof. Tsung-Te Liu, and Prof. An-Yeu Wu receive Best Paper Award from 2017 International Symposium on VLSI Design, Automation and Test (2017 VLSI-DAT) with paper entitled: “Low-Latency Voltage-Racing Winner-Take-All (VR-WTA) Circuit for Acceleration of Learning Engine.” |
2017-06-23 | |
PhD student, Hsuan-An Chen(instructed by Prof. Shih-Yen Lin) won best PhD student poster contribution award in Graphene 2017.
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2017-05-03 | |
Prof. Jenn-Gwo Hwu and Prof. Ching-Fuh Lin won 2016 MOST Outstanding Research Award.
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2017-04-07 | |
B.-Q. Lin, T.-C. Lin, and Y.-W. Chang won the Best Feature Paper Award at 2016 VLSI Design/CAD Symposium. (Paper title: An effective RDL routing algorithm for the InFO WLCSP technology)
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2017-02-15 | |
Yi-Chung Wu, a PhD student instructed by Prof. Chia-Hsiang Yang won the 2017 ISSCC Silkroad Award.
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2017-02-07 | |
Prof. Liang-Gee Chen was elected as 2016 NAI Fellow. (NAI: National Academy of Inventors)
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2016-12-05 | |
Dr. Young-Kai Chen, Distinguished Chair Professor, has been elected as 2016 Academicians.
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2016-07-07 | |
Prof. Chenming Hu was awarded 2016 National Medal of Technology and Innovation.
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2016-05-27 | |
Prof. An-Yeu (Andy) Wu won 2016 Y. Z. Hsu Scientific Award - Technology Invention Award.
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2016-05-16 | |
Prof. Si-Chen Lee was appointed as 2016 Macronix International Co., Ltd Chair Professor.
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2016-04-14 | |
Prof. Chihwei Liu won 2015 MOST Outstanding Research Award.
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2016-03-15 | |
Prof. Tsung-Hsien Lin won 2015 ISSCC Evening Session Award.
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2016-03-01 | |
The students team (Jiachen Liu, Hung-Yi Cheng, Ching-Chun Liao) instructed by Prof. An-Yeu (Andy) Wu won the Best Student Paper Award in 2015 IEEE International Workshop on Signal Processing Systems (SiPS’15).
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2015-12-25 | |
Prof. Yao-Wen Chang has been elected as VP of 2016-2017 IEEE CEDA. He has also served as the program chair on the CEDA Executive Committee and Board of Govornors.
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2015-12-17 | |
Prof. Tei-Wei Kuo is elevated to 2015 ACM Fellow: For Contributions to Performance and Reliability Enhancement of Flash-Memory Storage Systems.
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2015-12-09 | |
Prof. Yao-Wen Chang received IEEE Council on EDA (CEDA) Outstanding Service Award from ICCAD for outstanding service to the EDA community as ICCAD General Chair in 2014.
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2015-11-10 | |
The students team (Min-Jen Yang and Li-Wei Wang) instructed by Prof. Chung-Yang Huang won the 1st place at the 2015 Synopsys APPs Design Contest. Prof. Chung-Yang Huang also won the Best Instructor Award.
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2015-11-06 | |
The students team (Min-Jen Yang and Li-Wei Wang) instructed by Prof. Chung-Yang Huang won the 1st place at the 2015 CADathlon Contest @ ICCAD!!
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2015-11-06 | |
The students team (Ming-Jen Yang, Li-Wei Wang, Kuan-Yu Lin and Yi-Hong Lu) instructed by Prof. Chung-Yang Huang won the 2hd place at 2015 CAD Contest @ ICCAD.
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2015-11-06 | |
Prof. An-Yeu Wu was elected as a 2016-2018 IEEE CASS BoG(Board of Governors) Member.
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2015-10-23 | |
The placer "NTUplace4dr" developed by Prof. Yao-Wen Chang, students Chau-Chin Huang, Bo-Qiao Lin, Shen-Wei Yang, Szu-To Chen, Chin-Hao Chang, and research assistant Hsin-Ying Lee won the 1st place in the 2015 ACM ISPD Placement Contest.
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2015-04-01 | |
Prof. Shen-Iuan Liu received National Science Council’s “2014 Outstanding Research Award.”
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2015-03-26 | |
Prof. James B. Kuo and Prof. Liang-Gee Chen received National Science Council’s “2014 Outstanding Special Researcher Award.”
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2015-03-24 | |
Prof. Tzi-Dar Chiueh and co-workers received the silver medal of “2014 National Invention and Creation Award.”
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2015-03-24 | |
Breaking News: IEEE ISSCC 2015 A Smart CMOS Assay SoC for Rapid Blood Screening Test of Risk Prediction
National Taiwan University, National Taiwan University Hospital, and Chang Gung University present a 9mm2, 3V, 2.7mW, 0.35μm CMOS SoC for blood screening immunoassay. The SoC micro-controller unit assists blood filtration through a nanoporous aluminium oxide membrane, biomolecular conjugation with antibodies attached to magnetic beads, electrolytic pumping, magnetic flushing and threshold detection based on Hall sensor array read-out analysis. |
2015-02-25 | |
Research on junctionless Ge gate-all-around nFETs by prof. Chee-Wee Liu's group has been published in 2014 IEDM
Research on junctionless Ge gate-all-around nFETs by prof. Chee-Wee Liu's group has been published in 2014 IEDM. The paper in title of “In-situ Doped and Tensily Stained Ge Junctionless Gate-all-around nFETs on SOI Featuring Ion = 828 μA/μm, Ion/Ioff ~ 1E5, DIBL= 16-54 mV/V, and 1.4X External Strain Enhancement” is presented by I-Hsieh Wong. In-situ CVD doping and laser anneal can reach [P] and tensile strain as high as 2E20 cm-3 and 0.34%, respectively, in Ge on SOI with low defect density and high activation rate (nearly 100% near the surface), and enables high performance of the junctionless (JL) Ge gate-all-around (GAA) nFETs. The device with the Wfin of 13 nm, EOT of 10 nm, and nominal LG of 280 nm has Ion = 350 μA/μm, Ion/Ioff = 3E6, SS = 185 mV/dec, and DIBL = 16 mV/V. The device with the Wfin of 9 nm and EOT of ~ 0.8 nm achieves the record high Ion of 828 μA/μm at VGS - VT = 1.5 V and VDS = 2 V with DIBL = 54 mV/V, Ion/Ioff = 1E5 and SS = 150 mV/dec. Besides the epitaxial tensi |
2014-12-16 | |
Prof. An-Yeu Wu was elevated to IEEE Fellow, effective 1 January 2015.
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2014-11-25 |