Nano-Scale Metal-Oxide-Semiconductor Device Process Lab The major research topics are on the Si Metal-Oxide-Semiconductor (MOS) devices, especially on the study of ultra-thin gate oxides. Our researchs include the hot issues of the silicon devices: (1) The electrical charactericsics of uniformity, relibility and mechanical stress of RTP; (2) The preparation of ultra-thin oxide by using Anodization process; (3) Investigation of MOS devices with high-k gate dielectrics.

MBE lab is located in EE building I. Major facilities are two VG-V80 MBE systems for growing III-V compound semiconductor materials and devices. Other equipments include parameter analyzer, PL system, Hall effect system and etc., which are for device and material characterization. The current research topics are on (1) GaAsSb/GaAs type-II quantum well structure and devices, (2) InAsN and Sb-based MIR optoelectronic materials and devices, and (3) InAs/GaAs quantum dot and its applications on optoelectronic devices.

Our laboratory has been established since August 1993 and located in Room 405 of EE bldg 2. We are led by Prof. Ching-Fuh Lin and concentrate in semiconductor lasers and related research. Since 1997, we have published 58 international journal papers, 130 conference proceeding papers, and obtained 24 patens with many others pending. Our research topics include experiments and theory, and cover electroluminescence and laser of silicon, optical and spectral characteristics measurement, electrical characteristics measurement, fabrication and quantum-dot lasers, mode-locked semiconductor lasers, etc.

The Organic Optoelectronics Lab is directed by Dr. Chung-Chih Wu. Current research efforts are in two major areas: (1) display technologies: such as high-efficiency, high image-quality full-color OLED device and display technologies; display optics etc.; (2) organic optoelectronics and semiconductors: such as physics/technologies of organic semiconductors and devices; light-emitting and electronic devices; photoresponsive devices; carrier transport and photophysics in organic semiconductors and devices. Major facilities include deposition systems for organic materials and devices, and various electrical and optical characterization instruments.

"Our researches focus on two parts: 1. novel growth technique of SiGe molecular beam epitaxy (SiGe MBE) and 2. fundamental optical and electrical properties of functional SiGe material and devices. For the first part, we have developed modulated impurity doping in low-temperature Si buffer layer and ultra low-temperature Si buffer layer. By these growth methods, we fabricate the functional SiGe devices, such as superlattices, quantum wells, quantum dots and photodetector and photoemitter in THz regime. For the second part, we measure the properties of devices mentioned above in the high magnetic field at the low temperature, such as magneto-luminescence effects, quantum hall effects and so on. Our labs are located at room B115 and B114b in the CCMS building. "

The Bio-Electrical System Technology Lab is focus on the research of integration technologies. Utilizing the nano/micro-fabricaiton techniques, interface circuit design, and various sensing material evelopment, the integrated health-care system with low-cost and highperformance can be implemented. In detail, this lab is devoted to develop the following research fields: (1) Wireless Sensor Network; (2) Bio-Molecular Sensor Array; (3) Micro Gas Sensor Array, and (3) Micro Total-Analysis-System. Currently, this lab is located at Room 206 of Electrical Engineering Building I.

My researches focus on compound semiconductor microelectronic and optoelectronic devices, light-emitting transistors, transistor lasers, sub-10nm transistor development, photonic integrated circuits, microwave device design and characterization, power electronics, microcavity lasers, and VCSELs.

Quantum Electronics Laboratory (QEL) was established in 2013 summer by Prof. Jiun-Yun Li. The main focus is to explore the logic devices for future computing. By semiconductor epitaxy technology such as chemical vapor deposition (CVD), combined with atomic layer deposition (ALD), we grow high-quality heterostructures for advanced logic and memory devices, quantum computing, spin transistors, and Si photonics applications.

(1) Ferroelectric FET and memory circuits for energy-efficient edge computing applications - FeFET nonvolatile memory for in-memory computing and neuromorphic applications (2) Analysis of Silicon, Ge, III-V, and 2D materials based nano-electronics, including the variability and reliability analysis of UTB FET, FinFET, nanowire/nanosheet FETs, TFET, and NCFET etc. (3) Low power and high performance SRAM design - Variability-tolerant and reliability-tolerant design - Read-/write-assist circuits and sense amplifiers (4) Monolithic 3D IC and system-technology co-optimization