NE Labs
Laboratory Leader Introduction
C-V Lab Hwu, Jenn-Gwo
Nano-Scale Metal-Oxide-Semiconductor Device Process Lab The major research topics are on the Si Metal-Oxide-Semiconductor (MOS) devices, especially on the study of ultra-thin gate oxides. Our researchs include the hot issues of the silicon devices: (1) The electrical charactericsics of uniformity, relibility and mechanical stress of RTP; (2) The preparation of ultra-thin oxide by using Anodization process; (3) Investigation of MOS devices with high-k gate dielectrics.
Molecular Beam Epitaxy Laboratory Lin, Hao-Hsiung
MBE lab is located in EE building I. Major facilities are two VG-V80 MBE systems for growing III-V compound semiconductor materials and devices. Other equipments include parameter analyzer, PL system, Hall effect system and etc., which are for device and material characterization. The current research topics are on (1) GaAsSb/GaAs type-II quantum well structure and devices, (2) InAsN and Sb-based MIR optoelectronic materials and devices, and (3) InAs/GaAs quantum dot and its applications on optoelectronic devices.
Semiconductor laser and Ultrafast Optoelectronics Lab Lin, Ching-Fuh
Our laboratory has been established since August 1993 and located in Room 405 of EE bldg 2. We are led by Prof. Ching-Fuh Lin and concentrate in semiconductor lasers and related research. Since 1997, we have published 58 international journal papers, 130 conference proceeding papers, and obtained 24 patens with many others pending. Our research topics include experiments and theory, and cover electroluminescence and laser of silicon, optical and spectral characteristics measurement, electrical characteristics measurement, fabrication and quantum-dot lasers, mode-locked semiconductor lasers, etc.
Thermal Image Lab Kuan, Chieh-Hsiung
Thermal Image Lab is located at EE-II R426. The main research direction in our laboratory includes the following four major fields: (1) The quantum well infrared ray detects hot image monitoring system and infrared ray wave band LED, (2) Cooperate with E-BEAM LITHOGRAPHY to process nano-device, (3) Nano-crystal memory, (4) Novel biomedical microfluidic devices deveopement. Major facilities include FTIR, MICRO PL RAMAN, E-BEAM LITHOGRAPHY.
Organic Optoelectronics andDisplay Technology Lab Wu, Chung-Chih
The Organic Optoelectronics Lab is directed by Dr. Chung-Chih Wu. Current research efforts are in two major areas: (1) display technologies: such as high-efficiency, high image-quality full-color OLED device and display technologies; display optics etc.; (2) organic optoelectronics and semiconductors: such as physics/technologies of organic semiconductors and devices; light-emitting and electronic devices; photoresponsive devices; carrier transport and photophysics in organic semiconductors and devices. Major facilities include deposition systems for organic materials and devices, and various electrical and optical characterization instruments.
SiGe MBE Lab Cheng, Hung-Hsiang
"Our researches focus on two parts: 1. novel growth technique of SiGe molecular beam epitaxy (SiGe MBE) and 2. fundamental optical and electrical properties of functional SiGe material and devices. For the first part, we have developed modulated impurity doping in low-temperature Si buffer layer and ultra low-temperature Si buffer layer. By these growth methods, we fabricate the functional SiGe devices, such as superlattices, quantum wells, quantum dots and photodetector and photoemitter in THz regime. For the second part, we measure the properties of devices mentioned above in the high magnetic field at the low temperature, such as magneto-luminescence effects, quantum hall effects and so on. Our labs are located at room B115 and B114b in the CCMS building. "
Quantum Devices Laboratory Mao, Ming-Hua
Quantum Devices Laboratory is directed by Prof. Ming-Hua Mao. Current research focuses on two major areas: (1) Fabrication and application of quantum-dot devices. We have fabricated 1.3 micron In GaAs/GaAs quantum-dot lasers with modulation bandwidth of 2.8 GHz. They are among the best 1.3 micron quantum-dot lasers worldwide. Simulation models will be built for theoretical studies. (2) Fabrication and investigation of microcaities. We successfully fabricated current-injection InGaAs quantum-dot microdisk lasers operating at room temperature for the first time. The lowest threshold current of 0.45 mA is achieved at room temperature from a device of 6.5 μm in diameter with single-mode emission. These microdisk lasers with superior properties can be applied in miniaturized photonic devices, energy-saving or intergration with Si waveguide structures for optical interconnec
The Bio-Electrical System Technology Lab Lin, Chih-Ting
The Bio-Electrical System Technology Lab is focus on the research of integration technologies. Utilizing the nano/micro-fabricaiton techniques, interface circuit design, and various sensing material evelopment, the integrated health-care system with low-cost and highperformance can be implemented. In detail, this lab is devoted to develop the following research fields: (1) Wireless Sensor Network; (2) Bio-Molecular Sensor Array; (3) Micro Gas Sensor Array, and (3) Micro Total-Analysis-System. Currently, this lab is located at Room 206 of Electrical Engineering Building I.
Integrated Optoelectronic Device Lab Wu, Chao-Hsin (Wayne)
My researches focus on compound semiconductor microelectronic and optoelectronic devices, light-emitting transistors, transistor lasers, sub-10nm transistor development, photonic integrated circuits, microwave device design and characterization, power electronics, microcavity lasers, and VCSELs.
Quantum Electronics Laboratory (QEL) Li, Jiun-Yun
Quantum Electronics Laboratory (QEL) was established in 2013 summer by Prof. Jiun-Yun Li. The main focus is to explore the logic devices for future computing. By semiconductor epitaxy tools of molecular beam epitaxy (MBE) and chemical vapor deposition (CVD), high-quality heterostructures can be grown for quantum device applications such as tunnel FETs and spin-FETs. QEL is also working on FinFETs and nanowire FETs to extend Moore’s law based on new channel materials such as Ge and GeSn. Other than device applications, QEL has put a lot of efforts on Si/SiGe, Ge/GeSi, and GeSn/Ge heterostructures for quantum physics such as spin-orbit interactions and topological insulators. Besides, QEL recently initiated a project of Si quantum dot and superconducting Josephson junction devices for quantum computing.
Nanoelectronics Research Lab Hu, Vita Pi-Ho
(1) Ferroelectric FET and memory circuits for energy-efficient edge computing applications - FeFET nonvolatile memory for in-memory computing and neuromorphic applications (2) Analysis of Silicon, Ge, III-V, and 2D materials based nano-electronics, including the variability and reliability analysis of UTB FET, FinFET, nanowire/nanosheet FETs, TFET, and NCFET etc. (3) Low power and high performance SRAM design - Variability-tolerant and reliability-tolerant design - Read-/write-assist circuits and sense amplifiers (4) Monolithic 3D IC and system-technology co-optimization
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