得獎者論文名稱論文發表處指導教授
蔡沅宏Bit-Slicing the Hilbert Space: Scaling Up Accurate Quantum Circuit SimulationDAC 2021江介宏
張鶴騰Deep integration of circuit simulator and SAT solverDAC 2021江介宏
蔡仲恩Highly Stacked 8 Ge0.9Sn0.1 Nanosheet pFETs with Ultrathin Bodies (~3nm) and Thick Bodies (~30nm) Featuring the Respective Record ION/IOFF of 1.4E7 and Record ION of 92μA at VOV=VDS= -0.5V by CVD Epitaxy and Dry EtchingIEDM 2021劉致為
謝伊妍A 96.2nJ/class Neural Signal Processor with Adaptable Intelligence for Seizure PredictionISSCC 2022楊家驤
林君豫A 0.008mm2 1.5mW 0.625-to-200MHz Fractional Output Divider with 120fs rms Jitter Based on Replica-DTC-Free Background CalibrationISSCC 2021林宗賢
鄒亞叡First Demonstration of Interface-Enhanced SAF Enabling 400°C-Robust 42 nm p-SOT-MTJ Cells with STT-Assisted Field-Free Switching and Composite ChannelsSymposium on VLSI Circuits/Technology 2021劉致為
蔡仲恩First Demonstration of Multi-VT Stacked Ge0.87Sn0.13 Nanosheets by Dipole-Controlled ALD WNxCy Work Function Metal with Low Resistivity and Thermal Budget ≤ 400 ℃Symposium on VLSI Circuits/Technology 2021劉致為
劉亦浚First Highly Stacked Ge0.95Si0.05 nGAAFETs with Record ION = 110 μA (4100 μA/μm) at VOV=VDS=0.5V and High Gm,max = 340 μS (13000 μS/μm) at VDS=0.5V by Wet EtchingSymposium on VLSI Circuits/Technology 2021劉致為
吳秉宸A fully integrated switched-capacitor voltage regulator with multi-rate successive approximation achieving 190 ps transient FoM and 83.7% conversion efficiencySymposium on VLSI Circuits/Technology 2021劉宗德
