|C-V Lab||Hwu, Jenn-Gwo||
Nano-Scale Metal-Oxide-Semiconductor Device Process Lab The major research topics are on the Si Metal-Oxide-Semiconductor (MOS) devices, especially on the study of ultra-thin gate oxides. Our researchs include the hot issues of the silicon devices: (1) The electrical charactericsics of uniformity, relibility and mechanical stress of RTP; (2) The preparation of ultra-thin oxide by using Anodization process; (3) Investigation of MOS devices with high-k gate dielectrics.
|Molecular Beam Epitaxy Laboratory||Lin, Hao-Hsiung||
MBE lab is located in EE building I. Major facilities are two VG-V80 MBE systems for growing III-V compound semiconductor materials and devices. Other equipments include parameter analyzer, PL system, Hall effect system and etc., which are for device and material characterization. The current research topics are on (1) GaAsSb/GaAs type-II quantum well structure and devices, (2) InAsN and Sb-based MIR optoelectronic materials and devices, and (3) InAs/GaAs quantum dot and its applications on optoelectronic devices.
|Semiconductor laser and Ultrafast Optoelectronics Lab||Lin, Ching-Fuh||
Our laboratory has been established since August 1993 and located in Room 405 of EE bldg 2. We are led by Prof. Ching-Fuh Lin and concentrate in semiconductor lasers and related research. Since 1997, we have published 58 international journal papers, 130 conference proceeding papers, and obtained 24 patens with many others pending. Our research topics include experiments and theory, and cover electroluminescence and laser of silicon, optical and spectral characteristics measurement, electrical characteristics measurement, fabrication and quantum-dot lasers, mode-locked semiconductor lasers, etc.
|Advanced Silicon Deviceand Process Laboratory||Liu, Chee-Wee||
His research includes SiGe/GeSn epi/photonics, stacked 3D transistors, thermal simulation (physics-based and neural network-based), IGZO TFT, and solar cells. He demonstrates the record high 2,400,000 cm2/Vs electron mobility in strained Si, the flicker noise of strained Si channel, the first CVD GeSn outperforming MBE in terms of hole mobility, the first stacked GeSn channels, and the first Si/SiGe/SiC MIS LEDs. He also invented the tree transistors, beyond FinFET and Stacked GAA. He has 571+ papers (228+ journal papers, 24 IEDM, 3VLSI), 40 US patents, 38 Taiwan ROC patents, , 2 China patents, more than 5096 citations, 34 Ph.D. graduates, 128 master graduates, and current students of 15 Ph.D. and 10 masters. He has 5 graduate students as professors (1NTU, 1 NTNU, 1 NCHU, 1 NDHU, 1 NJUST), and 3 postdocs as professors (1 NTU, 1 NCU, 1 CGU)
|Thermal Image Lab||Kuan, Chieh-Hsiung||
Thermal Image Lab is located at EE-II R426. The main research direction in our laboratory includes the following four major fields: (1) The quantum well infrared ray detects hot image monitoring system and infrared ray wave band LED, (2) Cooperate with E-BEAM LITHOGRAPHY to process nano-device, (3) Nano-crystal memory, (4) Novel biomedical microfluidic devices deveopement. Major facilities include FTIR, MICRO PL RAMAN, E-BEAM LITHOGRAPHY.
|Organic Optoelectronics andDisplay Technology Lab||Wu, Chung-Chih||
The Organic Optoelectronics Lab is directed by Dr. Chung-Chih Wu. Current research efforts are in two major areas: (1) display technologies: such as high-efficiency, high image-quality full-color OLED device and display technologies; display optics etc.; (2) organic optoelectronics and semiconductors: such as physics/technologies of organic semiconductors and devices; light-emitting and electronic devices; photoresponsive devices; carrier transport and photophysics in organic semiconductors and devices. Major facilities include deposition systems for organic materials and devices, and various electrical and optical characterization instruments.
|SiGe MBE Lab||Cheng, Hung-Hsiang||
"Our researches focus on two parts: 1. novel growth technique of SiGe molecular beam epitaxy (SiGe MBE) and 2. fundamental optical and electrical properties of functional SiGe material and devices. For the first part, we have developed modulated impurity doping in low-temperature Si buffer layer and ultra low-temperature Si buffer layer. By these growth methods, we fabricate the functional SiGe devices, such as superlattices, quantum wells, quantum dots and photodetector and photoemitter in THz regime. For the second part, we measure the properties of devices mentioned above in the high magnetic field at the low temperature, such as magneto-luminescence effects, quantum hall effects and so on. Our labs are located at room B115 and B114b in the CCMS building. "
|Quantum Devices Laboratory||Mao, Ming-Hua||
Quantum Devices Laboratory is directed by Prof. Ming-Hua Mao. Current research focuses on two major areas: (1) Fabrication and application of quantum-dot devices. We have fabricated 1.3 micron In GaAs/GaAs quantum-dot lasers with modulation bandwidth of 2.8 GHz. They are among the best 1.3 micron quantum-dot lasers worldwide. Simulation models will be built for theoretical studies. (2) Fabrication and investigation of microcaities. We successfully fabricated current-injection InGaAs quantum-dot microdisk lasers operating at room temperature for the first time. The lowest threshold current of 0.45 mA is achieved at room temperature from a device of 6.5 μm in diameter with single-mode emission. These microdisk lasers with superior properties can be applied in miniaturized photonic devices, energy-saving or intergration with Si waveguide structures for optical interconnec
|The Bio-Electrical System Technology Lab||Lin, Chih-Ting||
The Bio-Electrical System Technology Lab is focus on the research of integration technologies. Utilizing the nano/micro-fabricaiton techniques, interface circuit design, and various sensing material evelopment, the integrated health-care system with low-cost and highperformance can be implemented. In detail, this lab is devoted to develop the following research fields: (1) Wireless Sensor Network; (2) Bio-Molecular Sensor Array; (3) Micro Gas Sensor Array, and (3) Micro Total-Analysis-System. Currently, this lab is located at Room 206 of Electrical Engineering Building I.
|Integrated Optoelectronic Device Lab||Wu, Chao-Hsin (Wayne)||
My researches focus on compound semiconductor microelectronic and optoelectronic devices, light-emitting transistors, transistor lasers, sub-10nm transistor development, photonic integrated circuits, microwave device design and characterization, power electronics, microcavity lasers, and VCSELs.
|Quantum Electronics Laboratory (QEL)||JIUN-YUN LI||
Quantum Electronics Laboratory (QEL) was established in 2013 summer by Prof. Jiun-Yun Li. The main focus is to explore the logic devices for future computing. By semiconductor epitaxy tools of molecular beam epitaxy (MBE) and chemical vapor deposition (CVD), high-quality heterostructures can be grown for quantum device applications such as tunnel FETs and spin-FETs. QEL is also working on FinFETs and nanowire FETs to extend Moore’s law based on new channel materials such as Ge and GeSn. Other than device applications, QEL has put a lot of efforts on Si/SiGe, Ge/GeSi, and InAs/GaSb heterostructures for quantum physics such as spin-orbit interactions and topological insulators. Besides, QEL recently initiated a project of Si quantum dot devices for quantum computing.
|Micro/Nano Analytical Technologies & Systems Lab||Tian, Wei-Cheng||
Micro/Nano Analytical Technologies & Systems Lab Established in 2009, my lab is located in EE IV building Room 509. My research interests are on biological, chemical, and medical applications of micro & nano analytical technologies with the focus on the advanced CMOS technologies and devices, CMOS compatible integration, packaging, and reliability of the micro/nano devices and systems. The future goal is to improve the accuracy, speed, cost, and ease-of-use of pre-clinical, clinical, and in vitro diagnostics by using micro/nano-enabled analytical systems or instrumentations.
|Silicon Photonics and Nano Device Laboratory||Kuo, Yu-Hsuan||
The Silicon Photonics and Nano Device Laboratory is directed by Dr. Y.-H. Kuo. The research mainly focuses on silicon photonics and nanoelectronic devices, including silicon-germanium optical modulators, silicon-compliant lasers/LEDs, optical waveguides & optical interconnects/integration, and SiGe devices.
|Radio Frequency IC Design Lab||Lu, Shey-Shi||
Radio Frequency IC Design Lab We are now focusing on the research areas of Wireless Medical Electronics, including analog circuits, digital circuits and RF circuits
|Thin Film Transistor Laboratory||Lee, Si-Chen||
The thin film transistor (TFT) Laboratory is led by Prof. Si-Chen Lee. The equipments include plasma enhanced chemical vapor deposition (PECVD), low pressure chemical vapor deposition (LPCVD), reactive ion etching (RIE), sputter and voltage-current measurement system, Fourier Transform Infrared Spectrometer (FTIR), micro-Raman/photoluminescence measurement system (μRaman/PL). The research topics are divided into two categories. One is mainly on the silicon semiconductor devices. The research topics focus on the growth and characterization of a-Si:H/poly-Si material, poly-Si fabrication by excimer laser annealing (ELA), a-Si:H/poly-Si TFT driving circuit, thin film solar cell, flexible display technology, low temp passivation layer for OLED and Si nanowire field effect transistor. Other research areas include the III-V compound semiconductor devices, including the growth of InAs/GaAs quantum dot/ring and its application in infrared detector, photonic crystal device, i.e., InAs/GaAs quantum dot infrared photodetector, transmission properties of metal/dielectric periodic hole array and plasmonic thermal emitter, etc. Our recent accomplishments are:
1. We developed a new AMOLED pixel that has a solar cell inserted between the driving TFT and the OLED pixel. Such an pixel structure not only improves the contrast of the AMOLED but is also capable of recycling part of the incident light and emitted photons by OLED.
2. We have successfully fabricated low temperature poly-silicon thin film transistors (LTPS TFTs) prepared by excimer laser annealing of hydrogenated amorphous silicon (a-Si:H) on polyimide with 370 cm2/V-sec field effect mobility.
3. By utilizing surface plasmon, the infrared thermal emitter with narrow bandwidth and tunable wavelength is developed successfully.
4. It is demonstrated that the cross shaped hole arrays exhibit more efficient transmittance of incident light than those of the square and rectangular hole arrays with the same area and lattice constant.
5. By applying the surface plasmon phenomenon to quantum dot infrared photodetector (QDIP), a wavelength selectable narrow bandwidth detector is fabricated successfully.
|Integrated Optics Lab||Wang, Way-Seen||
Integrated Optics Lab. is dedicated to the design, fabrication, and theoretical simulation of lithium niobate-, silica-, and polymer-based optical waveguide devices, such as electro-optic modulators, power/polarization splitters, and optical sensors. Beam propagation method (BPM) and finite difference time domain (FDTD) are mainly used to study new optical waveguide structures, such as ridge, prism-based bending, simplified coherently coupled structures, etc. The equipments include thermal evaporation system, RF sputtering system, high temperature furnace, and optical measurement system.
|Device and Circuit Lab||Kuo, James-B.||
Our lab is led by Dr. James B. Kuo. We focus on CMOS device modeling and circuit design techniques, including low-voltage CMOS VLSI circuits and SPICE compact modeling of bulk and SOI CMOS devices.